Metal-ferroelectric-semiconductor (MFS) FET's using LiNbO3/Si (100) structures for nonvolatile memory application

N-channel metal-ferroelectric-semiconductor field-effect-transistors (MFSFET's) by using rapid thermal annealed LiNbO3/Si (100) structures were fabricated and demonstrated nonvolatile memory (NVM) operations of the MFSFET's. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were 600 cm(2)/V . s and 0.16 mS/mm, respectively. The I-D-V-G characteristics of MFSFET's showed a hysteresis loop due to the ferroelectric nature of the LiNbO3 films. The drain current of the "on" state was more than four orders of magnitude larger than the "off" state current at the same "read" gate voltage of 0.5 V, which means the memory operation of the MFSFET.