A highly manufacturable corner rounding solution for 0.18μm shallow trench isolation

被引：32

作者：

Chang, CP ^{[1
]}

Pai, CS ^{[1
]}

Baumann, FH ^{[1
]}

Liu, CT ^{[1
]}

Rafferty, CS ^{[1
]}

Pinto, MR ^{[1
]}

Lloyd, EJ ^{[1
]}

Bude, M ^{[1
]}

Klemens, FP ^{[1
]}

Miner, JF ^{[1
]}

Cheung, KP ^{[1
]}

Colonell, JI ^{[1
]}

Lai, WYC ^{[1
]}

Vaidya, H ^{[1
]}

Hillenius, SJ ^{[1
]}

Liu, RC ^{[1
]}

Clemens, JT ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this Work, we first establish the relationship between corner leakage and corner rounding through device simulation. Then, we demonstrate a novel method to produce corner rounding, using a post-CMP, high temperature reoxidation process (HTR-STI). A semi-empirical model correlating rounding with re-oxidation and nitride mask thickness is derived from mechanical studies. Finally, we show the electrical properties of devices with HTR-STI for the 0.18 mu m technology.

引用

页码：661 / 664

页数：4