Hetero-epitaxial growth of BexZn1-xSe on Si(001) and GaAs(001) substrates

被引：24

作者：

Faurie, JP ^{[1
]}

Bousquet, V ^{[1
]}

Brunet, P ^{[1
]}

Tournie, E ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

Be-compounds; MBE; growth; band-gap;

D O I：

10.1016/S0022-0248(97)00534-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of BexZn1-xSe alloys has been investigated by molecular beam epitaxy on Si(0 0 1) and GaAs(0 0 1). The best results concerning BeSe have been obtained on Si(0 0 1) substrates with miscut of 4 degrees towards [1 1 0], at growth temperatures of at least 500 degrees C and with low growth rates of 0.1-0.2 Angstrom/s. A lattice parameter of 5.139 +/- 0.002 Angstrom has been measured on a 1 mu m thick layer. The direct bandgaps of BexZn1-xSe alloys have been measured through photoluminescence and reflectivity experiments. However, these optical studies have not been able to draw yet a conclusion on the existence of a direct-indirect bandgap transition. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：11 / 15

页数：5

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