Characterization of oxide films on SiC by spectroscopic ellipsometry

被引：21

作者：

Iida, T

Tomioka, Y

Hijikata, Y

Yaguchi, H

Yoshikawa, M

Ishida, Y

Okumura, H

Yoshida, S

机构：

[1] Saitama Univ, Dept Elect & Elect Syst Engn, Urawa, Saitama 3388570, Japan

[2] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan

[3] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 10B期

关键词：

spectroscopic ellipsometry; 6H-SiC; refractive index; oxidation; SiC/SiO2; interface;

D O I：

10.1143/JJAP.39.L1054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have, for the first time. evaluated the optical constants of thermally oxidized films on SIC by spectroscopic ellipsometry, and discussed the characteristics of SiC/SiO2 interfaces. It was found that the effective refractive indices are smaller than those of the oxide films on Si. They increase with oxidation time, or oxide thickness, reaching to the values of Si oxides. The refractive indices also depend on the oxidation methods, and the pyrogenic oxidation brings about larger refractive indices than dry oxidation. The origin of the small refractive indices of oxide films on SiC was discussed in terms of interface structures and composition in comparison with those of oxide films on Si.

引用

页码：L1054 / L1056

页数：3

共 15 条

[1] Observation of carbon clusters at the 4H-SiC/SiO2 interface [J].