Substrate-site selective growth of aligned carbon nanotubes

被引：192

作者：

Zhang, ZJ ^{[1
]}

Wei, BQ ^{[1
]}

Ramanath, G ^{[1
]}

Ajayan, PM ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 23期

关键词：

D O I：

10.1063/1.1330751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report highly substrate-site selective growth of carbon nanotubes by chemical vapor deposition from precursors of ferrocene and xylene mixtures. The technique allows us to grow well-aligned multiwalled carbon nanotubes preferentially on the SiO2 regions of patterned SiO2/Si substrates prepared by conventional lithography. This eliminates the catalyst predeposition step in the fabrication process. This simple approach may also be applied to build large-scale networks of organized nanotubes on planar substrates. (C) 2000 American Institute of Physics. [S0003-6951(00)00350-8].

引用

页码：3764 / 3766

页数：3

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