Pinhole decoration in magnetic tunnel junctions

被引：8

作者：

Allen, D ^{[1
]}

Schad, R

Zangari, G

Zana, I

Yang, D

Tondra, MC

Wang, D

机构：

[1] Univ Alabama, Dept Phys, Tuscaloosa, AL 35487 USA

[2] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA

[3] Univ Alabama, Dept Met & Mat Engn, Tuscaloosa, AL 35487 USA

[4] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA

[5] Nonvolatile Elect, Eden Prairie, MN 55344 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.582431

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magnetic tunnel junctions may experience failure due to local shortcuts in the insulating layers of such devices. To further develop magnetic tunnel junctions. the areal density of pinholes must be analyzed. By electrodepositing copper, we have developed a method to image pinholes and analyze the density of pinholes. Copper selectively nucleates at particular sites, forming structures that can be visualized using an optical microscope. Using this method, we examined the change in size of grown copper structures over time and the increase in the areal density of defects as a function of the applied electrodeposition potential. (C) 2000 American Vacuum Society. [S0734-2101(00)05704-3].

引用

页码：1830 / 1833

页数：4

共 16 条

[1] Tunneling magnetoresistance in ferromagnetic junctions: Bias dependence [J].