Second harmonic generation in ordered Ga1-xInxP

被引：14

作者：

Fluegel, B ^{[1
]}

Mascarenhas, A ^{[1
]}

Geisz, JF ^{[1
]}

Olson, JM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.57.R6787

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reflection second harmonic generation (SHG) has been used to measure the rotation/reflection properties of spontaneously ordered Ga1-xInxP. Particular conditions are identified in which the SHG signal arises solely from the order-induced symmetry breaking of the (4) over bar operation in zinc blende. By extending the usual experimental techniques to the epilayer edges, the point group of ordered Ga1-xInxP was completely determined from optical methods, and the four components of the nonlinear susceptibility were measured. The case of double-variant samples is also discussed.

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收藏

页码：R6787 / R6790

页数：4

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