Film morphology and thin film transistor performance of solution-processed oligothiophenes

被引：79

作者：

Chang, PC

Lee, J

Huang, D

Subramanian, V ^{[1
]}

Murphy, AR

Frechet, JMJ

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

来源：

CHEMISTRY OF MATERIALS | 2004年 / 16卷 / 23期

关键词：

D O I：

10.1021/cm0496570

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The relationship between film morphology and thin film transistor (TFT) performance was investigated for two symmetrical alpha,omega-substituted sexithiophene derivatives containing thermally removable solubilizing groups. Solution deposition methods such as spin-coating, dip-casting, and inkjet-printing were optimized for solvent and annealing temperatures, and several substrate surface treatments were explored. The resulting thin films were characterized with AFM and the observed semiconductor performance was found to correlate with the morphology of the films, with the most crystalline films exhibiting the highest performance. Devices showed overall mobilities as high as 0.07 cm(2)/V s with on/off ratios > 10(8), which are among the highest reported values for oligothiophenes solution cast at room temperature.

引用

页码：4783 / 4789

页数：7

共 39 条

[1] Afzali A, 2002, CHEM MATER, V14, P1742, DOI 10.1021/cm0115281
[2] [Anonymous], 1958, Z. Kristallogr
[3] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility
Bao, Z
Dodabalapur, A
Lovinger, AJ
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4108 - 4110
[4] Bao ZN, 2002, ADV FUNCT MATER, V12, P526, DOI 10.1002/1616-3028(20020805)12:8<526::AID-ADFM526>3.0.CO
[5] 2-S
[6] COMPREHENSIVE INVESTIGATION OF THE SOLUTION PHOTOPHYSICS AND THEORETICAL ASPECTS OF OLIGOTHIOPHENES OF 1-7 RINGS
BECKER, RS
DEMELO, JS
MACANITA, AL
ELISEI, F
[J]. PURE AND APPLIED CHEMISTRY, 1995, 67 (01) : 9 - 16
[7] LOGIC GATES MADE FROM POLYMER TRANSISTORS AND THEIR USE IN RING OSCILLATORS
BROWN, AR
POMP, A
HART, CM
DELEEUW, DM
[J]. SCIENCE, 1995, 270 (5238) : 972 - 974
[8] LIGHT-EMITTING-DIODES BASED ON CONJUGATED POLYMERS
BURROUGHES, JH
BRADLEY, DDC
BROWN, AR
MARKS, RN
MACKAY, K
FRIEND, RH
BURN, PL
HOLMES, AB
[J]. NATURE, 1990, 347 (6293) : 539 - 541
[9] Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films
Collet, J
Tharaud, O
Chapoton, A
Vuillaume, D
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1941 - 1943
[10] Electronic sensing of vapors with organic transistors
Crone, B
Dodabalapur, A
Gelperin, A
Torsi, L
Katz, HE
Lovinger, AJ
Bao, Z
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (15) : 2229 - 2231

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