Effect of saturation caused by amplified spontaneous emission on semiconductor optical amplifier performance

被引：21

作者：

Liu, T ^{[1
]}

Obermann, K

Petermann, K

Girardin, F

Guekos, G

机构：

[1] TU Berlin, Dept EE, D-10587 Berlin, Germany

[2] ETH Zurich, CH-8093 Zurich, Switzerland

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 24期

关键词：

semiconductor optical amplifiers;

D O I：

10.1049/el:19971356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have investigated theoretically the effect of amplified spontaneous emission (ASE) on the spatial distribution of the carrier density. Measures of the semiconductor optical amplifier (SOA) performance, such as gain, saturation power and noise figure are derived. It is shown that the saturation due to the ASE strongly affects the SOA performance for device lengths > 500 mu m. The results are compared with experimental data and found to be in good agreement.

引用

页码：2042 / 2043

页数：2