p-Type semiconducting α,ω-dihexylsexithiophene for an organic thin film transistor

被引：23

作者：

Kwon, Jae-Hong

Seo, Jung-Hoon

Kang, Hochul

Choi, Dong Hoon

Ju, Byeong-Kwon ^{[1
]}

机构：

[1] Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136701, South Korea

[2] LG Phillips LCD R&D Ctr, Anyang 431080, Kyangki, South Korea

[3] Korea Univ, Dept Chem, Seoul 136701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 06期

关键词：

D O I：

10.1063/1.2711152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

End substitution of sexithiophene with hexyl groups, alpha,omega-dihexylsexithiophene (DH-6T), leads to a highly soluble conjugated oligomer. In this paper, we report on the synthesis of an air-stable p-type organic semiconductor, DH-6T. We also report on our analysis of its thermal, optical, and electrical properties. We obtained a stable characteristic curve. The field-effect performance had a mobility of 3.29x10(-4) cm(2)/V s, while the threshold voltage was about -19 V. The current on/off ratio was greater than 10(6) when the gate voltage was scanned from -40 to 0 V. (c) 2007 American Institute of Physics.

引用

页数：4

共 17 条

[1]

ARIAS AC, 2004, APPL PHYS LETT, V96, P2063

[2] Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography [J].