Room temperature silicon single-electron quantum-dot transistor switch

被引：13

作者：

Zhuang, L ^{[1
]}

Guo, LJ ^{[1
]}

Chou, SY ^{[1
]}

机构：

[1] Univ Minnesota, Dept Elect Engn, Nanostruct Lab, Minneapolis, MN 55455 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. Analysis of its I-V characteristic indicates that the energy level separation is about 110 meV and the silicon dot size is about 12 nm.

引用

页码：167 / 169

页数：3