Electronic structure of a Pt-Ge surface alloy

被引：15

作者：

Fukutani, K

Murata, Y

Brillo, J

Kuhlenbek, H

Freund, HJ

Taguchi, M

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Electrocommun, Dept Phys, Chofu, Tokyo 1828585, Japan

[3] Max Planck Gesell, Fritz Haber Inst, Dept Chem Phys, D-14195 Berlin, Germany

[4] ULVAC PHI Inc, Chigasaki, Kanagawa 2530084, Japan

来源：

SURFACE SCIENCE | 2000年 / 464卷 / 2-3期

基金：

日本学术振兴会;

关键词：

alloys; angle resolved photoemission; germanium; platinum; scanning tunneling microscopy;

D O I：

10.1016/S0039-6028(00)00711-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structural and electronic properties of a Pt(lll)-Ge surface alloy are studied by scanning tunneling microscope and angle-resolved photoemission spectroscopy. The electronic band structure in the T-L direction was measured and compared with that of Pt(lll). The crystal field parameters of 10 Dq and xi were evaluated to be 1.77 eV and 0.73 eV respectively. Alloying with Ge was found to reduce 10 Dq and enhance xi compared with pure Pt(lll). (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：48 / 56

页数：9

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