Atmospheric pressure chemical vapour deposition of TiS2 thin films on glass

Atmospheric pressure chemical vapour deposition (APCVD) of TiS2 films on glass substrates was achieved by reaction of, HS(CH2)(2)SH, HSC(CH3)(3) and S(Si(CH3)(3))(2) with TiCl4 at 275-600 degreesC. At substrate temperatures from 275 to 400 degreesC, the TiS2 Films were X-ray amorphous or nanocrystalline. At 500 degreesC and above, the films were crystalline with typical cell constants of a = 3.405 Angstrom, c = 5.609 Angstrom. All the films showed a TiS2 Raman pattern with bands at 335 and 380 cm(-1). Energy-dispersive analysis by X-rays (EDAX) gave a Ti:S ratio of 1:2. The TiS2 films were gold, highly reflective and showed semi-metal electrical. conductivities. Scanning electron microscopy (SEM) showed a dense particulate morphology at low substrate temperatures (200-400 degreesC) and a needle-like mosaic at higher deposition temperatures. APCVD reaction of TiCl4 and (CH3)(3)C-S-S-C(CH3)(3) at substrate temperatures of 250-400 degreesC produced TiS3 and at 500-600 degreesC TiS2 films. The TiS3 films gave Raman bands at 557, 369, 297 and 172 cm(-1), and a Ti:S ratio of 1:3 by EDAX. (C) 2003 Elsevier Science Ltd. All rights reserved.