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Hot-carrier reliability in n-MOSFETs used as pass-transistors

被引：2
作者：
Goguenheim, D
Bravaix, A
Vuillaume, D
Varrot, M
Revil, N
Mortini, P
机构：
[1] ISEM, LEMMI, F-83000 Toulon, France
[2] CNRS, UMR 9929, ISEN, IEMN, F-59652 Villeneuve Dascq, France
[3] SGS Thomson Microelect, F-38921 Crolles, France
来源：
MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 04期
关键词：
D O I：
10.1016/S0026-2714(97)00217-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AC stressing is investigated to determine the hot-carrier reliability in a 0.5 mu m CMOS technology and is interpreted by a quasi-static model based on distinct damage mechanisms. The hot-carrier dependence of n-MOSFETs operating in pass-transistor configurations is carefully studied as a function of the propagation time and geometry. It is shown that device degradation may exhibit in some cases a strong dependence on the propagation time and clearly differs from the simple case of inverter operation. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：539 / 544
页数：6
相关论文
共 8 条
[1]   HOT-CARRIER DEGRADATION BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS UNDER DYNAMIC OPERATION CONDITIONS [J].
BELLENS, R ;
GROESENEKEN, G ;
HEREMANS, P ;
MAES, HE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) :1421-1428
[2]  
CHAN VH, 1995, IEEE T ELECTRON DEV, V42, P957
[3]   INTERFACE STATES UNDER LOCOS BIRDS BEAK REGION [J].
MARCHETAUX, JC ;
DOYLE, BS ;
BOUDOU, A .
SOLID-STATE ELECTRONICS, 1987, 30 (07) :745-753
[4]   AC VERSUS DC HOT-CARRIER DEGRADATION IN N-CHANNEL MOSFETS [J].
MISTRY, KR ;
DOYLE, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) :96-104
[5]   HOT-CARRIER-RELIABILITY DESIGN RULES FOR TRANSLATING DEVICE DEGRADATION TO CMOS DIGITAL CIRCUIT DEGRADATION [J].
QUADER, KN ;
FANG, P ;
YUE, JT ;
KO, PK ;
HU, CM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) :681-691
[6]   CHARGING AND DISCHARGING PROPERTIES OF ELECTRON TRAPS CREATED BY HOT-CARRIER INJECTIONS IN GATE OXIDE OF N-CHANNEL METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].
VUILLAUME, D ;
BRAVAIX, A .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) :2559-2563
[7]   A COUPLED STUDY BY FLOATING-GATE AND CHARGE-PUMPING TECHNIQUES OF HOT-CARRIER-INDUCED DEFECTS IN SUBMICROMETER LDD N-MOSFETS [J].
VUILLAUME, D ;
MARCHETAUX, JC ;
LIPPENS, PE ;
BRAVAIX, A ;
BOUDOU, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (04) :773-781
[8]   DYNAMIC DEGRADATION IN MOSFETS .2. APPLICATION IN THE CIRCUIT ENVIRONMENT [J].
WEBER, W ;
BROX, M ;
KUNEMUND, T ;
MUHLHOFF, HM ;
SCHMITTLANDSIEDEL, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (08) :1859-1867
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