Electronic properties of low-dimensional Si nanostructures. I. Local electronic probabilities

被引:8
作者
Koga, J
Nishio, K
Ohtani, H
Yamaguchi, T
Yonezawa, F
机构
[1] Keio Univ, Dept Phys, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
[2] Tokyo Womens Med Univ, Dept Phys, Shinjuku Ku, Tokyo 1628666, Japan
关键词
nanostructures; quantum wires; photoluminescence; quantum confinement; local states;
D O I
10.1143/JPSJ.69.2188
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Although extensive studies have been carried out concerning the effective visible photoluminescence (PL) from porous and nanostructure Si, no conclusive argument about the mechanism of PL has been reported so far. The well-known quantum confinement model is appealing, but is an oversimplified model As a first step towards a detailed analysis of the problem, we report ill this series of papers local electronic properties of low-dimensional Si nanostructures, calculated in the non-orthogonal tight-binding (NTB) scheme. In the present paper (part1), we propose the existence of characteristic "layer states" for the electrons in a quantum wire, which is important in a detailed analysis of PL from Si. A succeeding paper (part2) will be devoted to the analysis of the local density of states.
引用
收藏
页码:2188 / 2191
页数:4
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