Complete plasma physics, plasma chemistry, and surface chemistry simulation of SiO2 and Si etching in CF4 plasmas.

A complete plasma simulator including plasma physics, plasma chemistry and surface chemistry has been developed and applied for Si and SiO2 etching ill fluorocarbon plasmas, The synthesis methodology of the complete simulator from its modules is presented. Consistent simulation results are shown, which compare successfully with experimental data of etching rates/yields for a broad range of conditions ranging from ion beam etching, to reactive ion etching (RIE). to high density inductive coupled rf plasma etching (ICP).