Room-temperature electro-optic up-conversion via internal photoemission

被引:38
作者
Russell, KJ [1 ]
Appelbaum, I
Temkin, H
Perry, CH
Narayanamurti, V
Hanson, MP
Gossard, AC
机构
[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[2] MIT, Dept Phys, Cambridge, MA 02139 USA
[3] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA
[4] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.1571981
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe the fabrication and operation of a device which performs linear optical up-conversion at room temperature. The mechanism for up-conversion is based on internal photoemission from a Schottky contact. We then describe the voltage dependence of this device and interpret it in terms of total energy conservation. Although an AlGaAs/GaAs system is employed here, the functionality is not material-specific and therefore should be widely applicable to different materials systems, such as GaN/InGaN. (C) 2003 American Institute of Physics.
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页码:2960 / 2962
页数:3
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