Relationship between surface roughness of indium tin oxide and leakage current of organic light-emitting diode

被引：100

作者：

Kim, KB

Tak, YH

Han, YS

Baik, KH

Yoon, MH

Lee, MH

机构：

[1] Yeungnam Univ, Dept Appl Elect, Kyongsan 712749, South Korea

[2] LG Elect, LG Elite, OLED Div, Kumi 730030, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 4B期

关键词：

indium tin oxide; organic light emitting diode; surface roughness; leakage current;

D O I：

10.1143/JJAP.42.L438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relationship between surface roughness of indium tin oxide (ITO) and leakage current of organic light-emitting diode (OLED) was investigated. The surface roughness of ITO was measured with atomic force microscope (AFM) before the device fabrication by using these substrates, OLEDs were fabricated and their electrical properties were measured. leakage current of OLEDs depending on the surface roughness of the substrate. In this letter, we report that leakage currents of OLEDs are highly dependent on the peak-to-valley roughness (Rpv) of ITO.

引用

页码：L438 / L440

页数：3

共 6 条

[1] Effect of indium tin oxide substrate roughness on the morphology, structural and optical properties of CdS thin films [J].