Gallium arsenide metal-semiconductor-metal photodiodes as optoelectronic mixers for microwave single-sideband modulation

被引：3

作者：

Anderson, GW ^{[1
]}

Chipman, LE ^{[1
]}

Kub, FJ ^{[1
]}

Park, D ^{[1
]}

Frankel, MY ^{[1
]}

Carruthers, TF ^{[1
]}

Modolo, JA ^{[1
]}

Hobart, KD ^{[1
]}

Katzer, DS ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED OPTICS | 1998年 / 37卷 / 01期

关键词：

D O I：

10.1364/AO.37.000028

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Gallium arsenide (GaAs) metal-semiconductar-metal (MSM) photodetectors have unique propel-ties including high-bandwidth, linearity, and biphase response that make them suitable as mixers and programmable weights for microwave and communications applications. An optical technique for microwave single-sideband modulation that uses GaAs MSM photodiodes as mixers is reported. It uses MSM Schottky photodiodes formed in a GaAs/Al0.3Ga0.7As materials system to detect microwave in-phase and quadrature signals on optical carriers. Modulation of the photodetector bias voltages results in a single-sideband modulation of the microwave signal. Radio frequency and undesired-sideband suppression of 36 and 27 dB, respectively, were achieved. The optical wavelength was 850 nm, and the bandwidth of the photodetectors was greater than or equal to 29 GHz.

引用

页码：28 / 33

页数：6

共 25 条

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