Tuning self-assembled InAs quantum dots by rapid thermal annealing

Blueshifts in the photoluminescence emission energies from an ensemble of self-assembled InAs quantum dots are observed as a result of postgrowth thermal annealing. Enhancement of the integrated photoluminescence emission and narrowing of the full width half-maxima (from 55 to 12 meV) occur together with blueshifts up to 300 meV at annealing temperatures up to 950 degrees C. Evidence that the structures remain as dots comes form the observation of level filling and photoluminescence excitation studies which reveal LO phonon peaks occurring at multiples of similar to 30 meV from the detection energies. (C) 1997 American Institute of Physics.