Atomic-configuration-dependent energy at epitaxial silicide-silicon interfaces

被引：2

作者：

Kikuchi, A ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 02期

关键词：

silicide-silicon interface; misfit dislocation; lattice mismatch;

D O I：

10.1143/JJAP.37.653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Equilibrium energy and the misfit-dislocation density of transition-metal silicide (tmSi)-Si systems are calculated as a function of the lattice mismatch (Delta a) between tmSi and Si. For same thick tmSi films, the total energy of a type-B tmSi-Si system is found to be always lower than that of a type-A tmSi-Si system, especially when the tmSi films are thick. This is in good agreement with the experimental results indicating that the type-B film is a thermodynamically more favorable atomic structure at the NiSi2- and CoSi2-Si interfaces. The misfit-dislocation density increases with increasing Delta a, whereas the equilibrium energy of type-B tmSi-Si is represented by a curve with a maximum near Delta a = 2%.

引用

页码：653 / 656

页数：4

共 10 条

[1] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

[2] CALCULATION OF NISI2-SI SCHOTTKY-BARRIER HEIGHT USING AN INTERFACE-DEFECT MODEL [J].

KIKUCHI, A .

PHYSICAL REVIEW B, 1989, 40 (11) :8024-8025

[3] SCHOTTKY-BARRIER HEIGHT OF SINGLE-CRYSTAL NICKEL DISILICIDE SILICON INTERFACES [J].

KIKUCHI, A ;

OHSHIMA, T ;

SHIRAKI, Y .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4614-4617

[4] FERMI-LEVEL PINNING AT NICKEL DISILICIDE SILICON INTERFACE [J].

KIKUCHI, A .

PHYSICAL REVIEW B, 1989, 39 (18) :13323-13326

[5]

Kikuchi A, 1997, PHYS STATUS SOLIDI B, V203, P79, DOI 10.1002/1521-3951(199709)203:1<79::AID-PSSB79>3.0.CO

[6]

2-A

[7] CORRELATION BETWEEN SCHOTTKY-BARRIER HEIGHT AND THE HEAT OF FORMATION OF TRANSITION-METAL SILICIDES [J].

KIKUCHI, A .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3270-3272

[8] OBSERVATION OF MISFIT DISLOCATIONS IN EPITAXIAL COSI2/SI(111) LAYERS BY SCANNING TUNNELING MICROSCOPY [J].

STALDER, R ;

SIRRINGHAUS, H ;

ONDA, N ;

VONKANEL, H .

APPLIED PHYSICS LETTERS, 1991, 59 (16) :1960-1962

[9] GROWTH OF ULTRATHIN SINGLE-CRYSTAL NISI2 LAYERS ON SI(111) [J].

TUNG, RT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1840-1844

[10] STRUCTURAL REACTIONS OF SI(111) WITH COBALT AND FORMATION OF COBALT DISILICIDE [J].

WU, SC ;

WANG, ZQ ;

LI, YS ;

JONA, F ;

MARCUS, PM .

PHYSICAL REVIEW B, 1986, 33 (04) :2900-2902

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