Carrier transport properties in single-walled carbon nanotubes studied by photoluminescence spectroscopy

被引:1
作者
Ohno, Y. [1 ]
Shimada, T.
Kishimoto, S.
Maruyama, S.
Mizutani, T.
机构
[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 3320012, Japan
[2] PRESTO Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
[3] Univ Tokyo, Dept Mech Engn, Bunkyo Ku, Tokyo 1338656, Japan
来源
SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES AND FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES, 2005 | 2006年 / 38卷
关键词
D O I
10.1088/1742-6596/38/1/002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated the photoluminescence (PL) of in individual single-walled carbon nanotubes (SWNTs) placed in field-effect transistor structures to study carrier transport in the SWNT. The relation between the recombination lifetime and carrier transit time has been evaluated from the drain-field dependence of PL intensity. Time-resolved photoluminescence of SWNTs dispersed in surfactant solution has also been studied to evaluate the recombination lifetime. From these results, the carrier saturation velocity was estimated.
引用
收藏
页码:5 / 8
页数:4
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