Scanning tunneling spectroscopy of charge effects on semiconductor surfaces and atomic clusters

被引:18
作者
Maslova, NS [1 ]
Oreshkin, SI
Panov, VI
Savinov, SV
Depuydt, A
Van Haesendonck, C
机构
[1] Moscow MV Lomonosov State Univ, Chair Quantum Radio Phys, Moscow 119899, Russia
[2] Katholieke Univ Leuven, Vaste Stoffys Magnetisme Lab, B-3001 Louvain, Belgium
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.567638
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have used scanning tunneling microscopy and scanning tunneling spectroscopy at liquid helium temperature to study the electronic structure of in situ cleaved, (110) oriented surfaces of InAs single crystals. Both unperturbed, atomically flat areas and areas with an atomic-size defect cluster have been investigated. We show that the anomalous behavior of the local tunneling conductivity, which indicates a pronounced enhancement of the semiconductor band gap for the flat areas, is consistent with band bending induced by charges localized at the apex of the tip. Atomic-size defect clusters contain additional charges which modify the band bending; this explains the different behavior of the tunneling conductivity near the defect cluster. The experimentally observed oscillations of the tunneling conductivity near the band gap edges can be directly related to resonant tunneling through quantized surface states which appear because of the band bending. (C) 1998 American Institute of Physics.
引用
收藏
页码:146 / 152
页数:7
相关论文
共 19 条
[1]   Chaos, interactions, and nonequilibrium effects in the tunneling resonance spectra of ultrasmall metallic particles [J].
Agam, O ;
Wingreen, NS ;
Altshuler, BL ;
Ralph, DC ;
Tinkham, M .
PHYSICAL REVIEW LETTERS, 1997, 78 (10) :1956-1959
[2]  
AOLLER JG, 1975, PHYS REV, V13, P2812
[3]  
Arseev P. I., 1992, Soviet Physics - JETP, V75, P575
[4]  
ARSEEV PI, 1997, SEMICONDUCTORS97
[5]   ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
TERSOFF, J ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195
[6]   TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :923-929
[7]   Atomic-scale structure and electronic properties of GaN/GaAs superlattices [J].
Goldman, RS ;
Feenstra, RM ;
Briner, BG ;
OSteen, ML ;
Hauenstein, RJ .
APPLIED PHYSICS LETTERS, 1996, 69 (24) :3698-3700
[8]  
LANDAUER R, 1985, SPRINGER SERIES SOLI, V61, P38
[9]  
Maslova N. S., 1992, Soviet Physics - JETP, V75, P505
[10]  
MASLOVA NS, 1997, STM97 0720