Real-time investigations on the formation of CuInSe2 thin film solar cell absorbers from electrodeposited precursors

被引:26
作者
Jost, S.
Hergert, F.
Hock, R.
Schulze, J.
Kirbs, A.
Voss, T.
Purwins, M.
Schmid, M.
机构
[1] Univ Erlangen Nurnberg, Chair Crystallog & Struct Phys, D-91058 Erlangen, Germany
[2] Atotech Deutschland GmbH, D-10553 Berlin, Germany
[3] Univ Erlangen Nurnberg, Dept Mat Sci 6, Crystal Growth Lab, D-91058 Erlangen, Germany
关键词
CuInSe2; chalcopyrites; thin films; real-time X-ray diffraction; electrodeposition;
D O I
10.1016/j.solmat.2006.12.012
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this article, we present results of a detailed real-time X-ray diffraction (XRD) study on the formation of CuInSe2 from electroplated precursors. The solid-state reactions observed during the selenisation of three different types of precursors are presented. The first type of precursors (I) consists of the nanocrystalline phases Cu2-xSe and InSe at room temperature, which react to CuInSe2 starting at 470 K. The second type of precursor (II) shows an inhibited CuInSe2 formation out of the initial phases Cu2-xSe and gamma-In2Se3 starting at 400 K. The third precursor type (III) shows completely different selenisation behaviour. Starting from the intermetallic compound Cul(11)In(9) and amorphous selenium, the formation of the binary selenides In4Se3 and CuSe is observed after the melting point of selenium at 494 K. After selenium transfer reactions, the compound semiconductor CuInSe2 is formed out of Cu2-xSe and InSe. This type (III) reaction path is well known for the selenisation of SEL precursors (stacked elemental layers of sputtered copper and indium and thermally evaporated selenium). (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:636 / 644
页数:9
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