Properties of sputtered thin films of vanadium titanium oxide for use in electrochromic windows

被引：29

作者：

Burdis, MS ^{[1
]}

机构：

[1] Pilkington Grp Res, Ormskirk L40 5UF, Lancs, England

来源：

THIN SOLID FILMS | 1997年 / 311卷 / 1-2期

关键词：

optical properties; oxides; sputtering; electrochemistry;

D O I：

10.1016/S0040-6090(97)00724-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of various compositions of VzTi1-zOy have been deposited by RF-diode sputtering. A variety of optical and electrochemical measurements have been carried out to determine their suitability to perform as counter electrodes (CE) in electrochromic windows. It has been found that in general, the films containing higher vanadium concentrations have higher charge capacities, which are seen to be easily sufficient to make useful CE layers in electrochromic windows. The electrochromic behaviour of the VzTi1-zOy films themselves is seen to be quite complicated, and does not fit a first order theory. A simple theoretical model based on electrons being localised preferentially on vanadium atoms is given, which goes some way towards explaining this behaviour. (C) 1997 Elsevier Science S.A.

引用

页码：286 / 298

页数：13

共 18 条

[1] Electrochromism in sputtered WO3 thin films
Batchelor, RA
Burdis, MS
Siddle, JR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) : 1050 - 1055
[2] OBSERVATION OF NONIDEAL LITHIUM INSERTION INTO SPUTTERED THIN-FILMS OF TUNGSTEN-OXIDE
BURDIS, MS
SIDDLE, JR
[J]. THIN SOLID FILMS, 1994, 237 (1-2) : 320 - 325
[3] BURDIS MS, 1996, P SOC OPT ENG, V2531, P11
[4] COGAN SF, 1989, Patent No. 12844
[5] Site-saturation model for the optical efficiency of Tungsten oxide based devices
Denesuk, M
Uhlmann, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (09) : L186 - L188
[6] OPTICAL-PROPERTIES OF MIXED-OXIDE WO3-MOO3 ELECTROCHROMIC FILMS
FAUGHNAN, BW
CRANDALL, RS
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 834 - 836
[7] FAUGHNAN BW, 1975, RCA REV, V36, P177
[8] Granqvist C. G., 1995, HDB INORGANIC ELECTR
[9] HANSON, 1958, CONSTITUTION BINARY
[10] *JIS, R31061985 JIS

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