Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films

被引：21

作者：

Daoudi, K ^{[1
]}

Sandu, CS

Teodorescu, VS

Ghica, C

Canut, B

Blanchin, MG

Roger, JA

Oueslati, M

Bessaïs, B

机构：

[1] Fac Sci Tunis, Phys Mat Condensee Lab, Tunis 1060, Tunisia

[2] Univ Lyon 1, CNRS, UMR 5586, Dept Mat Phys, F-69622 Villeurbanne, France

[3] Natl Inst Phys Mat, R-76900 Bucharest, Romania

[4] Inst Natl Rech Sci & Tech, Lab Applicat Solaires, Hammam Lif 2050, Tunisia

来源：

CRYSTAL ENGINEERING | 2002年 / 5卷 / 3-4期

关键词：

ITO; sol gel; crystallization RTA; morphology;

D O I：

10.1016/S1463-0184(02)00028-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we report on the interest of the rapid thermal annealing (RTA) for densification of sol-gel (SG) indium tin oxide (ITO) thin films. The crystalline structure of these ITO films was visualized by transmission electron microscopy (TEM) and corresponding electron diffraction pattern were compared with data from pure In2O3. The average grain size, measured from TEM micrographs, ranges from 5 to 50 nm. The film densification was followed by Rutherford backscattering spectrometry coupled with cross-section TEM observations. A comparison with classical annealing is discussed. (C) 2003 Published by Elsevier Science Ltd.

引用

页码：187 / 193

页数：7

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