Optical properties of self-organized InAs nanostructures grown on InAlAs/InP(001)

被引：7

作者：

Hjiri, M

Hassen, F

Maaref, H

Salem, B

Bremond, G

Marty, O

Brault, J

Gendry, M

机构：

[1] Fac Sci Monastir, Monastir 5000, Tunisia

[2] Lab Phys Semicond, Monastir 5000, Tunisia

[3] Inst Natl Sci Appl, CNRS, UMR 5511, LPM, F-69621 Villeurbanne, France

[4] UCB Lyon 1, LENAC, F-69622 Villeurbanne, France

[5] Ecole Cent Lyon, CNRS, UMR 5512, LEOM, F-69134 Ecully, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期

关键词：

quantum dots; quantum wires; polarized photoluminescence; InAs;

D O I：

10.1016/S1386-9477(02)00750-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on photoluminescence (PL) and polarized PL studies of self-organized InAs quantum dots (QDs) and quantum wires (QWRs) grown on InAlAs lattice matched to lnP(0 0 1). A strong linear polarization degree is observed for the single-layer QWR structures. However, the QDs are found merely isotropic ones and their luminescence is a mixture of QDs ground and excited states. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：180 / 182

页数：3

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