Laser interference structuring of a-Si:H

Laser interference structuring with a pulsed Nd:YAG laser set-up is introduced and typical geometric dimensions and limitations are discussed. Intensity modulated laser beams are used to recrystallize amorphous silicon layers periodically at the intensity maxima. Stripe or tip structures of multi-crystalline (mc) silicon with sub-micrometer dimensions are shown. Structural, electronic and optical properties of the me-Si structures are discussed. A hybrid thin film p-i-n solar cell architecture is described where the textured TCO is replaced by a nat TCO and a laterally structured boron doped me-Si window layer. Light trapping, light diffraction and higher internal electric fields are proposed to be the main advantages of such a solar cell.