Yttrium oxide films prepared by pulsed laser deposition

被引:158
作者
Zhang, SQ [1 ]
Xiao, RF [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong
关键词
D O I
10.1063/1.366615
中图分类号
O59 [应用物理学];
学科分类号
摘要
Yttrium oxide, Y2O3, films were prepared by pulsed laser deposition in the presence of oxygen (O-2) gas. The microstructures of these films were found to be highly dependent on the deposition temperature and the amount of O-2 gas used during the deposition process. X-rap diffraction (XRD) analysis showed that the Y2O3 films transformed from amorphous to polycrystalline form when the deposition temperature was increased to 350 degrees C at an O-2 pressure of 0.01 mbar, and an extremely strong XRD peak originated from Y2O3(111) orientation was observed when the deposition temperature was increased above 400 degrees C, However, during the deposition at a fixed temperature (650 degrees C), the Y2O3 films became amorphous when the O-2 pressure was successively increased. For the films deposited on either fused silica or silicon substrate between 150 and 650 degrees C, very smooth surface morphologies with an average surface roughness of 0.4-19 nm have been observed by an atomic force microscopy. UV/Visible spectrometer and Fourier transform infrared analysis have shown that the as-grown Y2O3 films are highly transparent from the UV (with a band gap 5.6 eV) to the middle infrared region (similar to 15 mu m). The refractive index of the Y2O3 films measured by a spectroscopic ellipsometer changed from 1.9 to 2.15 with decreasing wavelength. Furthermore, a good waveguiding property has been observed in the as-grown Y2O3 films. The dielectric constant of these Y2O3 films measured by a standard ferroelectric rest system is between 11 and 18 depending on the film thickness. A C-V measurement has confirmed that these Y2O3 films are indeed good for metal-insulator-semiconductor device applications. (C) 1998 American Institute of Physics. [S0021-8979(98)00707-5].
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页码:3842 / 3848
页数:7
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