Quinquethiophene light-emitting diodes with molecular dimensions

被引：21

作者：

Pal, AJ

Ostergard, T

Paloheimo, J

Stubb, H

机构：

[1] Åbo Akademi University, Department of Physics, FIN-20500 Åbo

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.55.1306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Light-emitting diodes using Langmuir-Blodgett films of quinquethiophene as the emitting layer have been fabricated, and electrically and optically characterized. By utilizing additional layers of electron-transporting materials, the emitting material thickness has been reduced down to a single monolayer without serious decrease in the quantum efficiency. These electronic devices are valuable tools for studying carrier injection and transport, exciton formation, and quenching on a real molecular scale.

引用

收藏

页码：1306 / 1309

页数：4

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