Organic thin-film memory

被引:67
作者
Yang, Y [1 ]
Ma, LP
Wu, JH
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90024 USA
[2] Peking Univ, Dept Phys, Beijing, Peoples R China
[3] Humboldt Univ, Dept Phys, D-1086 Berlin, Germany
关键词
nonvolatile memory OBD; organic electrical bistable devices; rewritable memory; thin films;
D O I
10.1557/mrs2004.237
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, organic nonvolatile memory devices have attracted considerable attention due to their low cost and high performance. This article reviews recent developments in organic nonvolatile memory and describes in detail an organic electrical, bistable device (OBD) that has potential for applications. The OBD consists of a tri-layer of organics/metal nanoclusters/organics sandwiched between top and bottom electrodes. A sufficiently high applied bias causes the metal nanoparticle layer to become polarized, resulting in charge storage near the two metal/organic interfaces. This stored charge lowers the resistance of the device and leads to an electrical switching behavior. The ON and OFF states of an OBD differ in their conductivity by several orders of magnitude and show remarkable bistability-once either state is reached, the device tends to remain in that state for a prolonged period of time. More important, the conductivity states of an OBD can be precisely controlled by the application of a positive voltage pulse (to write) or a negative voltage pulse (to erase). Device performance tests show that the OBD is a promising candidate for high-density, low-cost electrically addressable data storage applications.
引用
收藏
页码:833 / 837
页数:5
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