Sr0.8Bi2.5Ta1.2Nb0.9O9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering

被引：49

作者：

Tsai, HM ^{[1
]}

Lin, P

Tseng, TY

机构：

[1] Natl Chiao Tung Univ, Inst Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 14期

关键词：

D O I：

10.1063/1.120571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films on a Pt/SiO2/Si substrate were prepared by using two-target off-axis radio frequency magnetron sputtering, and their structural and electrical properties were investigated. The films crystallized with high (115) diffraction intensity at a substrate temperature of 600 degrees C, and showed columnar microstructure. The 600 degrees C sputtered films with a thickness of 440 nm exhibited remanent polarization (2P(r)) of 52 mu C/cm(2) and coercive field (2E(c)) 28 kV/cm at an applied voltage of 1.5 V. The leakage current density was about 6 X 10(-6) A/cm(2) at an electric field of 50 kV/cm. The films demonstrated fatigue free characteristics up to 1.0 X 10(10) switching cycles under a 3 V bipolar 1 MHz square wave. (C) 1998 American Institute of Physics. [S0003-6951(98)04014-5].

引用

页码：1787 / 1789

页数：3

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