Electron-phonon coupling of α-Ga boron -: art. no. 214107

被引:52
作者
Ma, YM
Tse, JS
Klug, DD
Ahuja, R
机构
[1] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
[2] Jilin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China
[3] Univ Saskatchewan, Dept Phys, Saskatoon, SK S7N 0K4, Canada
[4] Uppsala Univ, Condensed Matter Theory Dept, Uppsala, Sweden
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1103/PhysRevB.70.214107
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic properties, lattice dynamics, and electron-phonon coupling of boron with alpha-Ga structure are studied as a function of pressure by ab initio calculations. It is found that alpha-Ga boron is dynamically stable at high pressure. Electron-phonon calculations suggest that alpha-Ga boron is superconducting with strong anisotropy. Analysis of the phonon linewidths shows that the in-plane sigma-bonding states couple strongly with the y-z in-plane vibrations, contributing mainly to the electron-phonon coupling. The theoretical results suggest that the alpha-Ga structure might be a good candidate for the high-pressure metallic phase of boron.
引用
收藏
页码:1 / 6
页数:6
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