Room temperature InAsSb photovoltaic midinfrared detector

被引：62

作者：

Rakovska, A

Berger, V

Marcadet, X

Vinter, B

Glastre, G

Oksenhendler, T

Kaplan, D

机构：

[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

[2] Ecole Polytech, F-91128 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.126988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InAs0.91Sb0.09 p-i-n photovoltaic midinfrared detector grown by molecular beam epitaxy and operating at room temperature is presented. An R(0)A of 1.05 Ohm cm(2) at 250 K and 0.12 Ohm cm(2) at 295 K has been achieved, resulting in a detectivity of 4.5 x 10(9) cm root<(Hz)over bar>/W at 3.39 mu m and 250 K. The quality of the active region material ensures a sufficiently low generation-recombination current. Room temperature performances are limited by the diffusion of holes from the active region through the confining barriers. (C) 2000 American Institute of Physics. [S0003-6951(00)04429-6].

引用

页码：397 / 399

页数：3

共 9 条

[1]

KEYES RJ, 1980, OPTICAL INFRARED DET, V19

[2]

Kruse P.W., 1997, UNCOOLED INFRARED IM, V47

[3] Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb [J].