Silicon double-island single-electron device

被引:13
作者
Fujiwara, A [1 ]
Takahashi, Y [1 ]
Yamazaki, K [1 ]
Namatsu, H [1 ]
Nagase, M [1 ]
Kurihara, K [1 ]
Murase, K [1 ]
机构
[1] NTT, Basic Res Labs, Kanagawa 24301, Japan
来源
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年
关键词
D O I
10.1109/IEDM.1997.650293
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.
引用
收藏
页码:163 / 166
页数:4
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