机构:
NTT, Basic Res Labs, Kanagawa 24301, JapanNTT, Basic Res Labs, Kanagawa 24301, Japan
Fujiwara, A
[1
]
Takahashi, Y
论文数: 0引用数: 0
h-index: 0
机构:
NTT, Basic Res Labs, Kanagawa 24301, JapanNTT, Basic Res Labs, Kanagawa 24301, Japan
Takahashi, Y
[1
]
Yamazaki, K
论文数: 0引用数: 0
h-index: 0
机构:
NTT, Basic Res Labs, Kanagawa 24301, JapanNTT, Basic Res Labs, Kanagawa 24301, Japan
Yamazaki, K
[1
]
Namatsu, H
论文数: 0引用数: 0
h-index: 0
机构:
NTT, Basic Res Labs, Kanagawa 24301, JapanNTT, Basic Res Labs, Kanagawa 24301, Japan
Namatsu, H
[1
]
Nagase, M
论文数: 0引用数: 0
h-index: 0
机构:
NTT, Basic Res Labs, Kanagawa 24301, JapanNTT, Basic Res Labs, Kanagawa 24301, Japan
Nagase, M
[1
]
Kurihara, K
论文数: 0引用数: 0
h-index: 0
机构:
NTT, Basic Res Labs, Kanagawa 24301, JapanNTT, Basic Res Labs, Kanagawa 24301, Japan
Kurihara, K
[1
]
Murase, K
论文数: 0引用数: 0
h-index: 0
机构:
NTT, Basic Res Labs, Kanagawa 24301, JapanNTT, Basic Res Labs, Kanagawa 24301, Japan
Murase, K
[1
]
机构:
[1] NTT, Basic Res Labs, Kanagawa 24301, Japan
来源:
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST
|
1997年
关键词:
D O I:
10.1109/IEDM.1997.650293
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A three-current-terminal single-electron device including two capacitively-coupled Si islands and gates that can control each island was fabricated on a Si-on-insulator wafer. Each island was embedded in one branch of a T-shaped Si wire. Current switching between the two branches was performed at 30 K by using the gate voltage to control the Coulomb blockade at each island. A correlation between these two currents was also found, which opens up the possibility of one-by-one transfer of electrons in this device.