Modeling of rarefied gas heat conduction between wafer and susceptor

被引:31
作者
Denpoh, K [1 ]
机构
[1] Tokyo Electron Ltd, Cent Res Lab, Nirasaki 40701, Japan
关键词
D O I
10.1109/66.661281
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gas-assisted wafer cooling/heating system is one of the key technologies for manufacturing microelectronic devices, The heat conduction in the gap between wafer and susceptor is modeled here as a one-or two-dimensional (1-D or 2-D) rarefied gas problem, The simulation is performed for monatomic and diatomic gases by means of the Direct Simulation Monte Carlo (DSMC) method, In the 1-D case the gas heat conductivity is obtained for various factors (gas species, surface temperature, energy accommodation coefficient) as a function of the Knudsen number, All numerical data obtained can be summarized by a simple equation: Smoluchowski's equation extended to the free molecular regime. In the 2-D case, the DSMC method is applied to the heat transfer between rough and smooth surfaces. The effect of surface roughness on heat conduction is clarified.
引用
收藏
页码:25 / 29
页数:5
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