Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma

被引：21

作者：

Gillis, HP

Choutov, DA

Martin, KP

Bremser, MD

Davis, RF

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

[2] UNIV CALIF LOS ANGELES, DEPT CHEM & BIOCHEM, LOS ANGELES, CA 90095 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 03期

基金：

美国国家科学基金会;

关键词：

etching; GaN; low energy electron; low energy electron enhanced etching (LE4); SiC;

D O I：

10.1007/s11664-997-0168-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hetero-epitaxial films of GaN(0001), deposited on SiC(0001) by organometallic vapor phase epitaxy and masked by 200 nm of SiO2 have been patterned by low energy electron enhanced etching (LE4) in hydrogen and chlorine de plasmas at room temperature. Lines 2.0 mu m wide showed highly anisotropic etching: straight side walls, no overcut, no trenching, and no ''pedestal'' at the base of the line. Root mean square (RMS) surface roughness of the films as grown was 8.5-10 Angstrom; after LE4, RMS surface roughness of the etched surfaces was 2.5 Angstrom.

引用

收藏

页码：301 / 305

页数：5

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