High resolution CdZnTe pixel detectors with VLSI readout

被引:8
作者
Cook, WR [1 ]
Boggs, SE
Bolotnikov, AE
Burnham, JA
Fitzsimmons, MJ
Harrison, FA
Kecman, B
Matthews, B
Schindler, SM
机构
[1] CALTECH, Pasadena, CA 91125 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
基金
美国国家航空航天局;
关键词
Amplifiers (electronic) - Image analysis - Image quality - Integrated circuit layout - Masks - Microprocessor chips - Optical collimators - Semiconducting cadmium compounds - Spurious signal noise - VLSI circuits;
D O I
10.1109/23.872995
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
CdZnTe pixel detectors with a custom VLSI readout, are being developed at Caltech/JPL for use in focusing hard X-ray telescopes. We have recently tested several prototype detector assemblies, each consisting of a 2 mm thick CdZnTe pixel detector indium bump bonded to our VLSI readout chip. A complete pulse height analysis chain is located directly below each 680 by 650 mu m pixel and includes a preamplifier, shaping amplifiers, and a peak stretcher/discriminator. Here we report on the first fully functional operation of these detector/VLSI hybrids. Using an Am-241 source, collimated to illuminate a single pixel, excellent energy resolution of 670 eV FWHM was measured for the 59.5 keV line at -10C, with electronic noise of only 340 eV FWHM. Illumination with an uncollimated Am-241 source was performed to assess the uniformity of pixel response and to exercise the readout chip's ability to process multiple pixel events arising from X-rays interacting above pixel boundaries. The imaging capability of the detector was demonstrated using a tungsten slit mask.
引用
收藏
页码:1454 / 1457
页数:4
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