Interferometric study of thermal dynamics in GaAs-based quantum-cascade lasers

被引:35
作者
Pflügl, C [1 ]
Litzenberger, M [1 ]
Schrenk, W [1 ]
Pogany, D [1 ]
Gornik, E [1 ]
Strasser, G [1 ]
机构
[1] Vienna Tech Univ, Inst Festkorpereleckt, A-1040 Vienna, Austria
关键词
D O I
10.1063/1.1561582
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermal dynamics in quantum-cascade lasers under pulsed operation is investigated by a scanning interferometric thermal mapping technique. An infrared laser beam probes the change in the refractive index caused by current-induced heating of the working devices. The measured phase shift provides a quantitative information on the thermal characteristics with a micrometer spatial and a nanosecond time resolution. Comparing the experiments with a two-dimensional thermal model enables us to determine the anisotropic heat conductivity in the multilayered active region, found to be much lower than the one of bulk GaAs, as well as the temperature increase in the active region during pulsed operation. (C) 2003 American Institute of Physics.
引用
收藏
页码:1664 / 1666
页数:3
相关论文
共 17 条
[1]  
ADACHI S, 1994, GAAS RELATED MAT
[2]   Room-temperature emission of GaAs/AlGaAs superlattice quantum-cascade lasers at 12.6 μm [J].
Anders, S ;
Schrenk, W ;
Gornik, E ;
Strasser, G .
APPLIED PHYSICS LETTERS, 2002, 80 (11) :1864-1866
[3]   Continuous wave operation of a mid-infrared semiconductor laser at room temperature [J].
Beck, M ;
Hofstetter, D ;
Aellen, T ;
Faist, J ;
Oesterle, U ;
Ilegems, M ;
Gini, E ;
Melchior, H .
SCIENCE, 2002, 295 (5553) :301-305
[4]  
Blakemore J. S., 1982, J APPL PHYS, V52, p123(R)
[5]   Thermal-conductivity measurements of GaAs/AlAs superlattices using a picosecond optical pump-and-probe technique [J].
Capinski, WS ;
Maris, HJ ;
Ruf, T ;
Cardona, M ;
Ploog, K ;
Katzer, DS .
PHYSICAL REVIEW B, 1999, 59 (12) :8105-8113
[6]   Thermal conductivity and ballistic-phonon transport in the cross-plane direction of superlattices [J].
Chen, G .
PHYSICAL REVIEW B, 1998, 57 (23) :14958-14973
[7]   CONTINUOUS-WAVE OPERATION OF A VERTICAL TRANSITION QUANTUM CASCADE LASER ABOVE T=80 K [J].
FAIST, J ;
CAPASSO, F ;
SIRTORI, C ;
SIVCO, DL ;
HUTCHINSON, AL ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1995, 67 (21) :3057-3059
[8]   Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using an improved laser interferometric technique [J].
Fürböck, C ;
Esmark, K ;
Litzenberger, M ;
Pogany, D ;
Groos, G ;
Zelsacher, R ;
Stecher, M ;
Gornik, E .
MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) :1365-1370
[9]   Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices [J].
Fürböck, C ;
Pogany, D ;
Litzenberger, M ;
Gornik, E ;
Seliger, N ;
Gossner, H ;
Müller-Lynch, T ;
Stecher, M ;
Werner, W .
JOURNAL OF ELECTROSTATICS, 2000, 49 (3-4) :195-213
[10]   TEMPERATURE-DEPENDENCE OF THE NEAR-INFRARED REFRACTIVE-INDEX OF SILICON, GALLIUM-ARSENIDE, AND INDIUM-PHOSPHIDE [J].
MCCAULLEY, JA ;
DONNELLY, VM ;
VERNON, M ;
TAHA, I .
PHYSICAL REVIEW B, 1994, 49 (11) :7408-7417