Dual workfunction Ni-silicide/HfSiON gate stacks by phase-controlled full-silicidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices

被引：74

作者：

Takahashi, K ^{[1
]}

Manabe, K ^{[1
]}

Ikarashi, T ^{[1
]}

Ikarashi, N ^{[1
]}

Hase, T ^{[1
]}

Yoshihara, T ^{[1
]}

Watanabe, H ^{[1
]}

Tatsumi, T ^{[1
]}

Mochizuki, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Device Res Labs, Sagamihara, Kanagawa 2291198, Japan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new threshold-voltage (Vth) control technique for fully-silicided (FUSI) metal/high-k gate stacks which are suitable for 45nm-node LOP and LSTP CMOS. The key is the phase control of FUSI Ni-silicide by changing Ni film thickness prior to silicidation anneal. As a result, Ni3Si and NiSi2 are formed whose effective workfunctions (WTs) on HfSiON are found to be 4.8eV and 4.4eV, respectively, being largely displaced from Si-midgap, by +/-0.2eV Meanwhile, the dopant segregation method, known to be successful in Vth-control of NiSi on SiO2, did not work on HfSiON. With Ni3Si-PMOS and NiSi2-NMOS transistors, a wide range of Vth-tuning is achieved coping with both LSTP and LOP requirements. At the same time, leakage suppression merit is better than the 45nm-node targets at electrical thickness (Tinv) around 2.0 nm. Also, our phase-controlled fully silicided (PC-FUSI) devices show excellent mobility characteristics.

引用

页码：91 / 94

页数：4

共 5 条

[1]

Hobbs C., 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), P9, DOI 10.1109/VLSIT.2003.1221060

[2]

Iwamoto T., 2003, IEDM, P639

[3]

Kedzierski J, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P315

[4]

MANABE, 2004, EXTENDED ABSTR SSDM, P18

[5]

Morioka A., 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), P165, DOI 10.1109/VLSIT.2003.1221137

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