Excitonic effects in core-excitation spectra of semiconductors

被引:64
作者
Buczko, R [1 ]
Duscher, G
Pennycook, SJ
Pantelides, ST
机构
[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[2] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
关键词
D O I
10.1103/PhysRevLett.85.2168
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Core-electron excitation spectra are used widely for structural and chemical analysis of materials, bur interpretation of the near-edge structure remains unsettled, especially for semiconductors. For the important Si L-2.3 edge, there are two mutually inconsistent interpretations, in terms of effective-mass excitons and in terms of Bloch conduction-hand final states. We report ab initio calculations and show that neither interpretation is valid and that the near-edge structure is in fact dominated by short-range electron-hole interactions even though the only bound excitons are effective-mass-like.
引用
收藏
页码:2168 / 2171
页数:4
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