Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties

A new technique of the simultaneous excitation of a magnetron sputtering discharge by rf and de was used for the deposition of undoped ZnO- and Al-doped ZnO (ZnO:Al) films. By this technique, it was possible to change the ion-to-neutral ratio j(i)/j(n) on the substrates during the film growth by more than a factor of ten, which was revealed by plasma monitor and Langmuir probe measurements. While for a pure de discharge the ions impinging onto a floating substrate have energies of about E-i approximate to 17 eV, the rf discharge is characterized by Ar-ion energies of about 35 eV. Furthermore, the ion current density for the rf excitation is higher by a factor of about five, which is caused by the higher plasma density in front of the substrate. This leads to a much higher ion-to-neutral ratio j(i)/j(n) on the growing film in the case of the rf discharge, which strongly influences the structural and electrical properties of the ZnO(:Al) films. The rf-grown films exhibit about the three times lower specific resistances (rho approximate to 6 X 10(-4) Ohm cm), due to lower mechanical stress, leading to higher charge carrier concentrations and mobilities. Undoped ZnO films exhibited the largest compressive stress values up to 2.8 GPa. The aluminium-doped films have a better (001) texture and larger grains (d(g) approximate to 38 nm), which can be attributed to the beneficial role of Al as a surfactant. The better crystalline film quality of the ZnO:Al films is the reason for the much lower compressive stress of <0.5 GPa in these layers. (C) 1998 American Institute of Physics.