Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells

被引：9

作者：

Morel, A

Lefebvre, P

Taliercio, T

Bretagnon, T

Gil, B

Grandjean, N

Damilano, B

Massies, J

机构：

[1] Univ Montpellier 2, CNRS, Grp Etud Semicond, F-34095 Montpellier 5, France

[2] Ctr Rech Hetero Epitaxie & Applicat Sophia Antipo, F-06560 Valbonne, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期

关键词：

InGaN/GaN quantum wells; donor acceptor pairs; recombination dynamics;

D O I：

10.1016/S1386-9477(02)00762-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional "pseudo-donor-acceptor pairs". (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：64 / 67

页数：4

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