High-temperature annealing of 6H-SiC single crystals and the site-competition processes

被引：2

作者：

Vlaskina, SI

Lee, YP

Rodionov, VE

Kaminska, M

机构：

[1] Sunmoon Univ, Dept Phys, Asan 336840, Choongnam, South Korea

[2] Ukrainian Acad Sci, Inst Semicond Phys, Kiev, Ukraine

[3] Univ Warsaw, Inst Expt Phys, Warsaw, Poland

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

annealing; self-compensation; hall factors; absorption coefficient; photoluminescence;

D O I：

10.4028/www.scientific.net/MSF.264-268.577

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Annealing of 6H-SiC single crystals was conducted at temperatures ranging from 1400 to 2100 degrees C in vacuum. The annealing process resulted in evaporation of atoms caused by dissociation of the surface. The Hall coefficient RH was measured in the temperature range from 77 to 1000 K and the absorption coefficient was determined. Two bands with peaks at 2.7 eV (blue) and 1.8 eV (orange) were detected by photoluminescence measurements in a wide temperature range (4.2 to 300 K). The results obtained can be explained by a self-compensation process. This self-compensation is caused by the formation of stable complexes consisting of Si vacancies and N atoms and C vacancies, respectively.

引用

页码：577 / 580

页数：4