Flat-band voltage shifts in P-MOS devices caused by carrier activation in P+ polycrystalline silicon and boron penetration

被引：17

作者：

Aoyama, T ^{[1
]}

Suzuki, K ^{[1
]}

Tashiro, H ^{[1
]}

Tada, Y ^{[1
]}

Arimoto, H ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We found that the annealing time dependence of the flat-band voltage (V-FB) shift of a p(+)-polysilicon gate MOS diode is attributed to the activation of boron in the polysilicon instead of the boron penetration through the gate SiO2. We identified the process window for p(+)-polysilicon gate pMOSFETs taking into account that boron is sufficiently activated in polysilicon without penetrating through the gate SiO2.

引用

页码：627 / 630

页数：4