Electron transport in strained-silicon directly on insulator ultrathin-body n-MOSFETs with body thickness ranging from 2 to 25 nm

被引：44

作者：

Gomez, Leonardo ^{[1
]}

Aberg, I. ^{[1
]}

Hoyt, J. L. ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 04期

基金：

美国国家科学基金会;

关键词：

mobility; silicon-on-insulator (SOI); strained-Si; strained-Si directly on insulator (SSDOI); ultrathin body (UTB) MOSFET;

D O I：

10.1109/LED.2007.891795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron effective mobility in ultrathin-body n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross-sectional transmission electron microscopy. Devices with body thicknesses ranging from 2 to 25 nm are studied. Significant mobility enhancements (similar to 1.8x) compared to unstrained SOI are observed for 30% SSDOI with body thicknesses of above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm.

引用

页码：285 / 287

页数：3

共 13 条

[1] Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm [J].

Aberg, I ;

Hoyt, JL .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) :661-663

[2]

Åberg I, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P52

[3] Fabrication of ultra-thin strained silicon on insulator [J].

Drake, TS ;

Ní Chléirigh, C ;

Lee, ML ;

Pitera, AJ ;

Fitzgerald, EA ;

Antoniadis, DA ;

Anjum, DH ;

Li, J ;

Hull, R ;

Klymko, N ;

Hoyt, JL .

JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (09) :972-975

[4]

Esseni D, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P719, DOI 10.1109/IEDM.2002.1175939

[5] Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application [J].

Esseni, D ;

Mastrapasqua, M ;

Celler, GK ;

Fiegna, C ;

Selmi, L ;

Sangiorgi, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (12) :2842-2850

[6]

HASAN S, 2003, SCHRED 2 1 TUTORIAL

[7]

LAUER I, 2006, THESIS MIT CAMBRIDGE

[8]

Rim K, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P49

[9] Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors [J].

Takagi, SI ;

Hoyt, JL ;

Welser, JJ ;

Gibbons, JF .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) :1567-1577

[10]

Thean AVY, 2005, 2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P134

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