Microstructure designing of silicon nitride

被引:39
作者
Kanzaki, S [1 ]
Brito, ME [1 ]
Valecillos, MC [1 ]
Hirao, K [1 ]
Toriyama, M [1 ]
机构
[1] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 462, Japan
关键词
D O I
10.1016/S0955-2219(97)00081-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 [材料科学与工程]; 080502 [材料学];
摘要
A new concept of materials design that allows simultaneous control of the morphologies and distribution of the structural elements at plural scale levels to create a new family of advanced ceramics was proposed. The validity of the concept was experimentally demonstrated using silicon nitride ceramics as model materials. Controlling anisotropic grain growth by seeding of small amounts of morphologically regulated, beta-silicon nitride single crystals (micro-scale level control), combined with alignment of the seed particles by tape casting followed by stacking of laminates (macro-scale level control) allows compatibility of high strength and high fracture toughness in this material, with a high degree of reliability for the mechanical strength. (C) 1997 Elsevier Science Limited.
引用
收藏
页码:1841 / 1847
页数:7
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