Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

被引：19

作者：

Nakatani, R

Yoshida, T

Endo, Y

Kawamura, Y

Yamamoto, M

Takenaga, T

Aya, S

Kuroiwa, T

Beysen, S

Kobayashi, H

机构：

[1] Osaka Univ, Dept Mat Sci & Engn, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Osaka Univ, Sci & Technol Ctr Atoms Mol & Ions Control, Grad Sch Engn, Suita, Osaka 5650871, Japan

[3] Osaka Univ, Frontier Res Ctr, Grad Sch Engn, Suita, Osaka 5650871, Japan

[4] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2005年 / 286卷

关键词：

magnetic memory; magnetization reversal; magnetic force microscopy; antiferromagnetic layer; RANDOM-ACCESS MEMORY; ANNULAR DOTS;

D O I：

10.1016/j.jmmm.2004.09.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ni-Fe/Mn-Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction of vortical magnetization is pinned in Ni-Fe/Mn-Ir asymmetric ring dots despite the direction of the magnetic fields. This investigation shows that the Ni-Fe/Mn-Ir asymmetric ring dots can be applied to pinned layers in magnetic memories with asymmetric ring shapes. (C) 2004 Elsevier B.V. All rights reserved.

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收藏

页码：31 / 36

页数：6

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