Exciton dynamics in homoepitaxial GaN

被引：7

作者：

Monemar, B ^{[1
]}

Bergman, JP

Ivanov, IG

Baranowski, JM

Pakula, K

Grzegory, I

Porowski, S

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[3] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

homoepitaxy; free excitons; bound excitons; capture; transfer; radiative lifetime; defects;

D O I：

10.4028/www.scientific.net/MSF.264-268.1275

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transient photoluminescence data with picosecond resolution is reported for homoepitaxial GaN layers grown with MOCVD. In the present: samples, with doping concentration in the 10(17) cm(-3) range, the free exciton (FE) decay time is less than 100 ps at 2 K, mainly due to capture to the shallow impurities. The donor bound exciton (DBE) decay time is also short, < 140 ps, influenced by excitation transfer to nonradiative defects. The shallow acceptor (probably Mg-related) bound exciton (ABE) has a well defined radiative decay time of about 800 ps.

引用

页码：1275 / 1278

页数：4

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