Fabrication of high density nanostructures gratings (>500Gbit/in2) used as molds for nanoimprint lithography

被引：14

作者：

Carcenac, F ^{[1
]}

Vieu, C ^{[1
]}

Lebib, A ^{[1
]}

Chen, Y ^{[1
]}

Manin-Ferlazzo, L ^{[1
]}

Launois, H ^{[1
]}

机构：

[1] CNRS, F-92220 Bagneux, France

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(00)00287-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an optimized process using very high resolution Electron Beam Lithography for the fabrication of high density nanostructures gratings, which can be used as molds for nanoimprint lithography. In our approach conventional PolyMethylMethAcrylate resist is exposed and, after lift-off and Reactive Ion Etching, pillars of 100 nm high are obtained on SiO2. Optimized conditions for the development of the resist after exposure are presented which enables the fabrication of high quality pillar gratings of 30nm pitch (similar to 700Gbit/in(2), and line gratings of 40nm pitch.

引用

页码：163 / 166

页数：4

共 6 条

[1] FABRICATION OF 5-7 NM WIDE ETCHED LINES IN SILICON USING 100 KEV ELECTRON-BEAM LITHOGRAPHY AND POLYMETHYLMETHACRYLATE RESIST [J].